| PART |
Description |
Maker |
| IDT728981 IDT728981DB IDT728981P IDT728981J |
128 x 128 TSI, 4 I/O at 2Mbps, Variable Delay, 5.0V
TSI-TDM Switches
TIME SLOT INTERCHANGE DIGITAL SWITCH 128 x 128
|
IDT[Integrated Device Technology]
|
| VSC9191 |
100 Gbps (40 x 40) SONET/SDH TSI Switch with Dual Rate I/O
|
http://
Vitesse Semiconductor Corporation
|
| IBM0418A8ACLAB IBM0436A4ACLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )寄存器锁存模式的同步CMOS静态RAM)
4Mb( 128K x 36 ) SRAM(4Mb( 128K x 36 )寄存器锁存模式的同步CMOS静态RAM) 4Mb的（128K的36）的SRAMMb的（128K的36）寄存器锁存模式的同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| IBM0418A80QLAB IBM0418A40QLAB |
8Mb( 512K x 18 ) SRAM(8Mb( 512K x 18 )同步CMOS静态RAM)
4Mb( 256K x 18 ) SRAM(4Mb( 256K x 18 )同步CMOS静态RAM) 4Mb的（256 × 18）的SRAMMb的（256 × 18）同步的CMOS静态RAM）的
|
IBM Microeletronics
International Business Machines, Corp.
|
| IDT72V70810 IDT72V70810PF IDT72V70810TF IDT72V7081 |
From old datasheet system
3.3 VOLT TIME SLOT INTERCHANGE DIGITAL SWITCH 1,024 x 1,024
1K x 1K TSI, 8 I/O at 8Mbps, 3.3V
|
Integrated Device Technology
IDT
|
| IDT72V73263BB IDT72V73263DR |
16K x 16K TSI, 64 I/O at 2/4/8/16 or 32Mbps, Rate-Matching, 3.3V
|
IDT
|
| MT55L256L32F MT55L512L18F |
(MT55LxxxLxxF) 8Mb SRAM
|
Micron Technology
|
| DS1265W-100IND |
3.3V 8Mb Nonvolatile SRAM
|
MAXIM - Dallas Semiconductor
|
| MT55L512L18P MT55L256L36P |
8Mb ZBT SRAM
|
MICRON[Micron Technology]
|
| ID244K01 |
8MB Flash Memory Card
|
SHARP[Sharp Electrionic Components]
|
| MT58L512L18D |
(MT58Lxxxx) 8Mb SYNCBURST SRAM
|
Micron Semiconductor
|
| DS1265W DS1265W-DS1265W-150 DS1265W-100 DS1265W-15 |
3.3V 8Mb Nonvolatile SRAM
From old datasheet system
|
MAXIM - Dallas Semiconductor
Dallas Semiconducotr
|
